#Electronics #Engineering #ElectricalEngineering
The intrinsic carrier concentration of germanium (GE) is expressed as ni -1.66 x 10 ST - Eg m-3 xp m (2.127) 2kT where Eg 0.66 eV. (a) Calculate ni at 300 K and 600 K (b) Determine the electron and hole concentrations if Ge is doped with Pata density of 5 x 1016 cm3
★ SUBSCRIBE TO MY CHANNEL ★
️ / @thilebantheengineer
★Checkout my Channels and Websites★
https://linktr.ee/Thileban
Thanks for watching and don't forget to like and subscribe :-)