The intrinsic carrier concentration of germanium (GE) is expressed as ni -1.66 x 10 ST - Eg m-3 x…

Опубликовано: 29 Октябрь 2024
на канале: Engineer Thileban Explains
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The intrinsic carrier concentration of germanium (GE) is expressed as ni -1.66 x 10 ST - Eg m-3 xp m (2.127) 2kT where Eg 0.66 eV. (a) Calculate ni at 300 K and 600 K (b) Determine the electron and hole concentrations if Ge is doped with Pata density of 5 x 1016 cm3


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