A Threshold Switching Selector Based on Highly Ordered Ag Nanodots for X‐Point Memory Applications

Опубликовано: 18 Ноябрь 2024
на канале: Advanced Portfolio News
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https://onlinelibrary.wiley.com/doi/f...
As computing power continues to grow, new memory and processing technologies are required. Cross-point memory technology is a new and promising starting point for next-generation memory applications. In Advanced Science, Prof,. Huaqiang Wu and Prof. Bin Gao from Tsinghua University, and Prof. Peng Zhou from Fudan University and co-workers set out to improve the current drawbacks of cross-point memory using highly ordered silver nanodots in the cross-point memory arrays.