Broadband Molybdenum Disulfide Field-Effect Phototransistors
Broadband phototransistors based on molybdenum disulfide with inverse photoresponse are reported. At 454 nm, the phototransistors exhibit ultrahigh photoresponsivity. While upon near-infrared light illumination, negative photoresponses with fast response time (50 ms) are observed for the first time. This work offers a new approach to developing subbandgap photodetectors and other novel optoelectronic devices. This is reported by Tong Zhang, Daping Chu, and co-workers in the article https://doi.org/10.1002/adma.201705880. To know more, please go to the Advanced Materials homepage.
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